Monolithic Integration of WDM Light Source for Silicon Photonics by Cascade of Al2O3: Er3+ DFB Lasers
نویسندگان
چکیده
We demonstrate a monolithic integration of WDM light source for silicon photonics by cascade of Al2O3: Er3+ DFB lasers. Simultaneous operation of four channels is achieved with dl/dT = 15.3±0.1 pm/oC temperature dependent wavelength shift. OCIS codes: (130.0130) Integratsed optics; (130.3120) Integrated optics devices; (140.3460) Lasers.
منابع مشابه
Wavelength division multiplexed light source monolithically integrated on a silicon photonics platform.
We demonstrate monolithic integration of a wavelength division multiplexed light source for silicon photonics by a cascade of erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers. Four DFB lasers with uniformly spaced emission wavelengths are cascaded in a series to simultaneously operate with no additional tuning required. A total output power of -10.9 dBm is obtained fr...
متن کاملReliable Silicon Photonic Light Source Using Curved Distributed Feedback Lasers
We propose a curved erbium doped aluminum oxide (Al2O3:Er) distributed feedback (DFB) laser for a reliable integrated photonics light source. The curved structure allows a compensation for radially varying film thickness in Al2O3:Er deposition process. OCIS codes: (130.0130) Integrated optics; (130.3120) Integrated optics devices; (140.3460) Lasers; (130.2790) Guided waves.
متن کاملUltra-narrow-linewidth Al2O3:Er3+ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform.
We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) inte...
متن کاملHeterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recent...
متن کاملBroadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.
Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped dist...
متن کامل